Datasheet > 2SB929A

2SB929A

更新时间： 2024-11-17 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管放大器
页数	文件大小	规格书
1页	62K
描述
High forward current transfer ratio hFE which has satisfactory linearity.

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2SB929A 数据手册

Product specification

2SB929A

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.2

-0.7

Features

High forward current transfer ratio hFE which has satisfactory linearity.

Low collector-emitter saturation voltage VCE(sat).

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-80

Collector-emitter voltage

Emitter-base voltage

Collector current

-80

-5

-3

-5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

1.3

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CES

Testconditons

Min

Typ

Max

Unit

ìA

V^CE= -80 V,V^BE= 0

VCE = -60 V,IB = 0

V^EB= -5 V, I^C= 0

-200

-300

-1

Collector cutoff curent

ICEO

Emitter-base cutoff current

Collector-emitter voltage

I^EBO

V^CEO

I^C= -30 mA, I^B= 0

VCE = -4 V, IC = -1 A

V^CE= -4 V, I^C= -3 A

V^CE= -4 V,I^C= -3 A

-80

250

Forward current transfer ratio

h^FE

Base to emitter voltage

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V^BE

-1.8

-1.2

V^CE(sat)I^C= -3 A, I^B= -0.375 A

f^T

t^on

t^stg

t^f

V^CE= -10 V, I^C= -0.5 A , f = 10 MHz

0.5

1.2

0.3

MHz

ìs

I^C= -1 A,I^B1= -0.1 A,I^B2= 0.1 A

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

h^FE

70 150

120 250

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