Datasheet > 2SB929A-Q

2SB929A-Q

更新时间： 2024-01-02 08:36:42

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1177K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB929A-Q 数据手册

SMD Type

Transistors

PNP Transistors

2SB929A

TO-252

Unit: mm

■ Features

+0.15

-0.15

● High forward current transfer ratio hFE

which has satisfactory linearity

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● Low collector to emitter saturation voltage V^CE(sat)

● Complementary to 2SD1252A

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-80

-5

Collector Current - Continuous

Collector current - Pulse

-3

-5

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.3

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -30 mA， I =0

= -100μA， I =0

CB= -80V , I =0

CE= -80V ,VBE=0

^CE= -60V ,I =0

^EB= -4V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector cutoff current

VCBO

VCEO

VEBO

-80

-5

CBO

CES

-0.1

-200

-300

-0.1

-1.2

-1.8

250

Collector cutoff current

CEO

EBO

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-3 A, I

=-375mA

C=-3 A, I

CE= -4 V, I

^CE= -4 V, I

C= -3 A

C= -1 A

C= -3 A

FE(1)

FE(2)

DC current gain

Turn-on time

Storage time

Fall time

0.5

1.2

0.3

= –1A, IB1 = – 0.1A, IB2 = 0.1A

stg

Transition frequency

CE= -10V, I

C= -500mA,f=10MHz

MHz

■ Classification of hfe(1)

Type

2SB929A-Q

2SB929A-P

120-250

Range

70-150

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与2SB929A-Q相关器件

型号	品牌	获取价格	描述	数据表
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2SB929ATX	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB929P	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB929-P	KEXIN	获取价格	PNP Transistors
2SB929PQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-262VAR
2SB929Q	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB929-Q	KEXIN	获取价格	PNP Transistors
2SB929R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB929TX	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB930	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)