Datasheet > 2SB929-Q

2SB929-Q

更新时间： 2024-09-24 01:12:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1178K
描述
PNP Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB929-Q 数据手册

SMD Type

Transistors

PNP Transistors

2SB929

TO-252

Unit: mm

■ Features

+0.15

-0.15

● High forward current transfer ratio hFE

which has satisfactory linearity

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● Low collector to emitter saturation voltage V^CE(sat)

● Complementary to 2SD1252

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-5

Collector Current - Continuous

Collector current - Pulse

-3

-5

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.3

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -30 mA， I =0

= -100μA， I =0

CB= -60V , I =0

CE= -60V ,VBE=0

^CE= -30V ,I =0

^EB= -4V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector cutoff current

VCBO

VCEO

VEBO

-60

-5

CBO

CES

-0.1

-200

-300

-0.1

-1.2

-1.8

250

Collector cutoff current

CEO

EBO

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-3 A, I

=-375mA

C=-3 A, I

CE= -4 V, I

^CE= -4 V, I

C= -3 A

C= -1 A

C= -3 A

FE(1)

FE(2)

DC current gain

Turn-on time

Storage time

Fall time

0.5

1.2

0.3

= –1A, IB1 = – 0.1A, IB2 = 0.1A

stg

Transition frequency

CE= -10V, I

C= -500mA,f=10MHz

MHz

■ Classification of hfe(1)

Type

2SB929-Q

2SB929-P

120-250

Range

70-150

www.kexin.com.cn

中文翻译

下载PDF

与2SB929-Q相关器件

型号	品牌	获取价格	描述	数据表
2SB929R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB929TX	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB930	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)
2SB930	TYSEMI	获取价格	High forward current transfer ratio hFE which has satisfactory linearity.
2SB930	KEXIN	获取价格	PNP Transistors
2SB930_15	KEXIN	获取价格	PNP Transistors
2SB930A	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SB930A	TYSEMI	获取价格	High forward current transfer ratio hFE which has satisfactory linearity.
2SB930A	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)
2SB930A_15	KEXIN	获取价格	PNP Transistors