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2SB928 PDF预览

2SB928

更新时间: 2024-11-16 22:22:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 51K
描述
Silicon PNP epitaxial planar type(For power amplification)

2SB928 数据手册

 浏览型号2SB928的Datasheet PDF文件第2页 
Power Transistors  
2SB928, 2SB928A  
Silicon PNP epitaxial planar type  
Unit: mm  
3.4±0.3  
8.5±0.2  
6.0±0.5  
For power amplification  
1.0±0.1  
For TV vartical deflection output  
Complementary to 2SD1250 and 2SD1250A  
1.5max.  
1.1max.  
0.5max.  
Features  
High collector to emitter VCEO  
0.8±0.1  
High collector power dissipation PC  
2.54±0.3  
N type package enabling direct soldering of the radiating fin to  
the printed circuit board, etc. of small electronic equipment.  
5.08±0.5  
1:Base  
2:Collector  
3:Emitter  
1
2
3
N Type Package  
Absolute Maximum Ratings (T =25˚C)  
C
Unit: mm  
3.4±0.3  
Parameter  
Symbol  
Ratings  
–200  
–150  
–180  
–6  
Unit  
8.5±0.2  
6.0±0.3  
1.0±0.1  
Collector to base voltage  
VCBO  
V
Collector to  
2SB928  
VCEO  
V
emitter voltage 2SB928A  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
V
A
A
–3  
R0.5  
R0.5  
0.8±0.1  
IC  
–2  
0 to 0.4  
2.54±0.3  
1.1 max.  
5.08±0.5  
Collector power TC=25°C  
30  
PC  
W
dissipation  
Ta=25°C  
1.3  
1:Base  
1
2
3
2:Collector  
3:Emitter  
N Type Package (DS)  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–50  
–50  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
Collector to base voltage  
VCB = –200V, IE = 0  
IEBO  
VEB = –4V, IC = 0  
VCBO  
IC = –500µA, IE = 0  
–200  
–150  
–180  
–6  
2SB928  
2SB928A  
Collector to emitter  
voltage  
VCEO  
VEBO  
IC = –5mA, IB = 0  
V
V
Emitter to base voltage  
IE = –500µA, IC = 0  
*
hFE1  
VCE = –10V, IC = –150mA  
VCE = –10V, IC = –400mA  
VCE = –10V, IC = –400mA  
IC = –500mA, IB = –50mA  
VCE = –10V, IC = – 0.5A, f = 10MHz  
60  
240  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
50  
–1  
–1  
V
V
Collector to emitter saturation voltage VCE(sat)  
Transition frequency  
fT  
30  
MHz  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
60 to 140  
100 to 240  
Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.  
1

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