SMD Type
Transistors
PNP Transistors
2SB928A
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
■ Features
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
● High collector-emitter voltage (Base open) VCEO
● High collector power dissipation P
● Complementary to 2SD1250A
C
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current - Pulse
Collector Power Dissipation
Ta = 25°C
Symbol
Rating
-200
-180
-6
Unit
V
VCBO
VCEO
VEBO
I
C
-2
A
I
CP
-3
30
P
C
W
℃
1.3
Junction Temperature
TJ
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -500 μA, I =0
Ic= -5 mA, I =0
Min
-200
-180
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
= -500μA, I
CB= -200V , I
EB= -4V , I =0
C
=0
I
CBO
EBO
V
V
E
=0
-50
-50
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-500 mA, I
B
=-50mA
=-50mA
V
C=-500 mA, I
B
-1.2
-1
V
BE
V
V
V
V
CE= -10V, I
CE= -10V, I
CE= -10V, I
CE= -10V, I
C
C
C
C
= -400mA
= -150mA
= -400mA
h
FE(1)
FE(2)
60
50
240
DC current gain
h
Transition frequency
f
T
= -500mA,f=10MHz
40
MHz
■ Classification of hfe(1)
Type
2SB928A-Q
60-140
2SB928A-P
100-240
Range
1
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