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2SB928A-P PDF预览

2SB928A-P

更新时间: 2024-11-20 01:11:47
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描述
PNP Transistors

2SB928A-P 数据手册

 浏览型号2SB928A-P的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
2SB928A  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
Features  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
High collector-emitter voltage (Base open) VCEO  
High collector power dissipation P  
Complementary to 2SD1250A  
C
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Collector current - Pulse  
Collector Power Dissipation  
Ta = 25°C  
Symbol  
Rating  
-200  
-180  
-6  
Unit  
V
VCBO  
VCEO  
VEBO  
I
C
-2  
A
I
CP  
-3  
30  
P
C
W
1.3  
Junction Temperature  
TJ  
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= -500 μAI =0  
Ic= -5 mAI =0  
Min  
-200  
-180  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
= -500μAI  
CB= -200V , I  
EB= -4V , I =0  
C
=0  
I
CBO  
EBO  
V
V
E
=0  
-50  
-50  
-1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-500 mA, I  
B
=-50mA  
=-50mA  
V
C=-500 mA, I  
B
-1.2  
-1  
V
BE  
V
V
V
V
CE= -10V, I  
CE= -10V, I  
CE= -10V, I  
CE= -10V, I  
C
C
C
C
= -400mA  
= -150mA  
= -400mA  
h
FE(1)  
FE(2)  
60  
50  
240  
DC current gain  
h
Transition frequency  
f
T
= -500mA,f=10MHz  
40  
MHz  
Classification of hfe(1)  
Type  
2SB928A-Q  
60-140  
2SB928A-P  
100-240  
Range  
1
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