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2SB928A PDF预览

2SB928A

更新时间: 2024-11-30 12:53:39
品牌 Logo 应用领域
TYSEMI PC
页数 文件大小 规格书
1页 63K
描述
High collector to emitter VCEO High collector power dissipation PC

2SB928A 数据手册

  
Product specification  
2SB928A  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
Features  
5.30+0.2  
0.50+0.8  
-0.2  
-0.7  
High collector to emitter VCEO  
High collector power dissipation PC  
0.127  
0.80+0.1  
max  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
-200  
-180  
-6  
Unit  
V
V
V
Peak collector current  
Collector current  
-3  
A
IC  
-2  
A
30  
Collector power dissipation  
TC=25  
Ta=25  
PC  
W
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to 150  
* Single pulse, Pw=10ms  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-50  
Unit  
ìA  
ìA  
V
VCB = -200V, IE = 0  
IEBO  
VEB = -4V, IC = 0  
-50  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = -500ìA, IE = 0  
-200  
-180  
-6  
IC = -5mA, IB = 0  
V
IE = -500ìA, IC = 0  
V
VCE = -10V, IC = -150mA  
VCE = -10V, IC = -400mA  
VCE = -10V, IC = -400mA  
IC = -500mA, IB = -50mA  
60  
240  
Forward current transfer ratio  
hFE  
50  
Base to emitter voltage  
VBE  
VCE(sat)  
fT  
-1  
-1  
V
V
Collector to emitter saturation voltage  
Transition frequency  
VCE = -10V, IC = -0.5A, f = 10MHz  
30  
MHz  
hFE Classification  
Rank  
hFE  
Q
P
60 to 140  
100 to 240  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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