Datasheet > 2SB927T

2SB927T

更新时间： 2024-11-17 20:58:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
3页	33K
描述
TRANSISTOR,BJT,PNP,25V V(BR)CEO,2.5A I(C),TO-92VAR

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2SB927T 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
最大集电极电流 (IC)：	2.5 A	配置：	Single
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SB927T 数据手册

Ordering number:ENN1029C

PNP/NPN Epitaxial Planar Silicon Transistors

2SB927/2SD1247

Large-Current Driving Applications

Applications

Package Dimensions

unit:mm

· Power supplies, relay drivers, lamp drivers, electrical

equipment.

2006B

[2SB927/2SD1247]

6.0

5.0

Features

4.7

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Large current capacity and wide ASO.

0.5

0.6

0.5

1 : Emitter

2 : Collector

3 : Base

( ) : 2SB927

1.45

SANYO : MP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)30

(–)25

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

(–)6

EBO

(–)2.5

(–)5

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

1.0

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)20V, I =0

(–)0.1

560*

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

EBO

=(–)2V, I =(–)0.1A

100*

=(–)2V, I =(–)1.5A

130

Gain-Bandwidth Product

=(–)10V, I =(–)50mA

150

MHz

Common Base Output Capacitance

=(–)10V, f=1MHz

19(32)

* : The 2SB927/2SD1247 are classified by 0.1A h as follows :

Continued on next page.

Rank

100 to 200 140 to 280 200 to 400 280 to 560

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O0303TN (KT)/92098HA (KT)/4077KI/3075KI/1263KI, TS No.1029–1/3

12 3

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与2SB927T相关器件

型号	品牌	获取价格	描述	数据表
2SB927-T	ONSEMI	获取价格	Small Signal Bipolar Transistor, 2.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MP, 3 P
2SB927U	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,2.5A I(C),TO-92VAR
2SB928	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)
2SB928A	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)
2SB928A	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SB928A	TYSEMI	获取价格	High collector to emitter VCEO High collector power dissipation PC
2SB928A_15	KEXIN	获取价格	PNP Transistors
2SB928AH	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB928AP	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB928A-P	KEXIN	获取价格	PNP Transistors

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