Datasheet > 2SB927-T

2SB927-T

更新时间： 2024-11-18 05:33:39

品牌	Logo	应用领域
安森美 - ONSEMI		开关晶体管
页数	文件大小	规格书
3页	33K
描述
Small Signal Bipolar Transistor, 2.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MP, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB927-T 数据手册

Ordering number:ENN1029C

PNP/NPN Epitaxial Planar Silicon Transistors

2SB927/2SD1247

Large-Current Driving Applications

Applications

Package Dimensions

unit:mm

· Power supplies, relay drivers, lamp drivers, electrical

equipment.

2006B

[2SB927/2SD1247]

6.0

5.0

Features

4.7

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Large current capacity and wide ASO.

0.5

0.6

0.5

1 : Emitter

2 : Collector

3 : Base

( ) : 2SB927

1.45

SANYO : MP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)30

(–)25

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

(–)6

EBO

(–)2.5

(–)5

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

1.0

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)20V, I =0

(–)0.1

560*

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

EBO

=(–)2V, I =(–)0.1A

100*

=(–)2V, I =(–)1.5A

130

Gain-Bandwidth Product

=(–)10V, I =(–)50mA

150

MHz

Common Base Output Capacitance

=(–)10V, f=1MHz

19(32)

* : The 2SB927/2SD1247 are classified by 0.1A h as follows :

Continued on next page.

Rank

100 to 200 140 to 280 200 to 400 280 to 560

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O0303TN (KT)/92098HA (KT)/4077KI/3075KI/1263KI, TS No.1029–1/3

12 3

中文翻译

下载PDF

与2SB927-T相关器件

型号	品牌	获取价格	描述	数据表
2SB927U	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,2.5A I(C),TO-92VAR
2SB928	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)
2SB928A	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)
2SB928A	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SB928A	TYSEMI	获取价格	High collector to emitter VCEO High collector power dissipation PC
2SB928A_15	KEXIN	获取价格	PNP Transistors
2SB928AH	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB928AP	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB928A-P	KEXIN	获取价格	PNP Transistors
2SB928APQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 2A I(C) \| TO-262VAR

与2SB927-T相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

35

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB927-T

2SB927-T 数据手册

与2SB927-T相关器件

与2SB927-T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB927-T

2SB927-T 数据手册

与2SB927-T相关器件

与2SB927-T相关文章

您还可以找

您在本页遇到什么问题？