Datasheet > 2SB926T

2SB926T

更新时间： 2024-11-23 20:33:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	89K
描述
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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中文翻译

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技术参数
数据手册

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2SB926T 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	1 week	风险等级：	5.3
端子面层：	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	Base Number Matches：	1

2SB926T 数据手册

Ordering number : EN1030F

2SB926 / 2SD1246

PNP / NPN Epitaxial Planar Silicon Transistors

2SB926 / 2SD1246

Large-Current Driving Applications

Applications

• Power supplies, relay drivers, lamp drivers, electrical equipment.

Features

• Adoption of FBET, MBIT processes.

• Low saturation voltage.

• Large current capacity and wide ASO.

Specifications ( ) : 2SB926

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

(--)30

(--)25

(--)6

(--)2

Collector Current (Pulse)

Collector Dissipation

(--)5

0.75

150

°C

Junction Temperature

Storage Temperature

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=(--)20V, I =0A

Unit

min

max

Collector Cutoff Current

Emitter Cutoff Current

(--)0.1

560*

µA

CBO

=(--)4V, I =0A

EBO

=(--)2V, I =(--)100mA

100*

DC Current Gain

=(--)2V, I =(--)1.5A, pulse

130

Gain-Bandwidth Product

Output Capacitance

=(--)10V, I =(--)50mA

150

MHz

Cob

=(--)10V, f=1MHz

(32)19

Continued on next page.

* : The 2SB926 / 2SD1246 are classified by 100mA h as follows :

Rank

100 to 200

140 to 280

200 to 400

280 to 560

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 4 I www.onsemi.com

2SB926_2SD1246/D

12 3 4

中文翻译

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2SB927S-AE	ONSEMI	获取价格	2SB927S-AE
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