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2SB906-O(2-7B1A) PDF预览

2SB906-O(2-7B1A)

更新时间: 2024-11-22 14:46:23
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 151K
描述
TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

2SB906-O(2-7B1A) 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:LEAD FREE, 2-7B1A, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.73Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:NOT SPECIFIED端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):9 MHzBase Number Matches:1

2SB906-O(2-7B1A) 数据手册

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2SB906  
TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)  
2SB906  
Audio Frequency Power Amplifier Application  
Unit: mm  
Low collector saturation voltage  
: V = 1.0 V (typ.) (I = 3 A, I = 0.3 A)  
CE (sat)  
C
B
High power dissipation: P = 20 W (Tc = 25°C)  
C
Complementary to 2SD1221  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
60  
60  
V
V
V
A
A
CBO  
CEO  
EBO  
7  
I
3  
C
Base current  
I
B
0.5  
1.0  
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
20  
JEDEC  
JEITA  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2004-07-07  

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