Datasheet > 2SB778_2014

2SB778_2014

更新时间： 2022-02-26 13:39:40

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	200K
描述
Silicon PNP Power Transistors

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2SB778_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB778

DESCRIPTION

·With TO-3PML package

·Complement to type 2SD998

APPLICATIONS

·High power amplifier applications

·Recommended for 45~50W audio

frequency amplifier output stage

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

MAX

-120

-5

UNIT

Open base

Open collector

-10

I_B

Base current

-1.0

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3 4

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