2SB779

更新时间： 2024-02-22 16:19:11

品牌	Logo	应用领域
松下 - PANASONIC		/
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2页	39K
描述
Silicon PNP epitaxial planer type(For low-frequency output amplification)

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2SB779 数据手册

Transistor

2SB779

Silicon PNP epitaxial planer type

For low-frequency output amplification

Unit: mm

2.8 –⁺0⁰.^.3²

1.5 –⁺0⁰.^.0²5⁵

0.65±0.15

Features

■

0.65±0.15

●

Low collector to emitter saturation voltage V_CE(sat)

●

Satisfactory linearity of h_FEat the low collector voltage.

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–25

Unit

0.1 to 0.3

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

0.4±0.2

–20

–7

–1

1:Base

2:Emitter

3:Collector

JEDEC:TO–236

EIAJ:SC–59

Mini Type Package

I_C

– 0.5

200

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : 1A

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

µA

V_CB= –25V, I_E= 0

V_CE= –20V, I_B= 0

Collector cutoff current

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–25

–20

–7

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –2V, I_C= –0.5A^*2

V_CE= –2V, I_C= –1A^*2

220

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –500mA, I_B= –50mA^*2

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

– 0.2

– 0.4

–1.2

Transition frequency

f_T

150

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

^*h_FE1Rank classification

Rank

h_FE1

90 ~ 155

1AQ

130 ~ 220

1AR

Marking Symbol

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