Datasheet > 2SB688_2014

2SB688_2014

更新时间： 2024-11-25 01:23:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	213K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB688_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB688

DESCRIPTION

·With TO-3P(I) package

·Complement to type 2SD718

APPLICATIONS

·Power amplifier applications

·Recommend for 45~50W audio frequency

amplifier output stage

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3P(I)) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-120

-5

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

-8

I_B

Base current

-0.8

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3 4

中文翻译

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