Datasheet > 2SB689

2SB689

更新时间： 2024-11-24 05:57:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	223K
描述
Silicon PNP Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB689 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB689

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·High Power Dissipation

·Wide Area of Safe Operation

APPLICATIONS

·Designed for low frequency power amplifier and TV vertical

deflection output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-100

-4

UNIT

Collector Current-Continuous

Collector Current-Peak

-4

I_CM

-5

Total Power Dissipation

@ T_a=25℃

1.8

P_C

Total Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

-45~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与2SB689相关器件

型号	品牌	获取价格	描述	数据表
2SB690	ETC	获取价格	LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726
2SB691	ISC	获取价格	isc Silicon PNP Power Transistor
2SB691	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB695	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB695	ISC	获取价格	Silicon PNP Power Transistor
2SB696	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB696	ISC	获取价格	Silicon PNP Power Transistors
2SB697	JMNIC	获取价格	Silicon PNP Power Transistors
2SB697	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB697	ISC	获取价格	Silicon PNP Power Transistors