Datasheet > 2SB688LR

2SB688LR

更新时间： 2024-11-21 05:00:19

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
2页	77K
描述
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN

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2SB688LR 数据手册

UTC 2SB688

PNP EPITAXIAL SILICON TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION

FEATURES

* Complementary to 2SD718.

* Recommended for 45 ~ 50W Audio Frequency Amplifier

Output Stage.

TO-3P

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number: 2SB688L

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

PARAMETER

Collector-Base Voltage

SYMBOL

RATINGS

UNIT

V_CBO

V_CEO

V_EBO

I_C

-120

-5

Collector-Emitter Voltage

Emitter Base Voltage

Collector Current

-10

Base Current

I_B

-1

Collector Power Dissipation (T_C=25℃)

P_C

℃

Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-40 ~ +150

ELECTRICAL CHARACTERISTICS

(Ta=25℃)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

SYMBOL

I_CBO

I_EBO

V_(BR)CEO

h_FE

V_CE(sat)

V_BE

f_T

C_ob

TEST CONDITIONS

MIN

TYP

MAX

-10

UNIT

µA

V_CB= -120V, I_E= 0

V_EB= -5V, I_C= 0

I_C= -50mA, I_B= 0

V_CE= -5V, I_C= -1A

I_C= -5A, I_B= -0.5A

V_CE= -5A, I_C= -5A

V_CE= -5A, I_C= -1A

-120

160

-2.5

-1.5

MHz

280

Collector Output Capacitance

V_CB= -10V, I_E= 0, f=1MHz

CLASSIFICATION OF hFE

RANK

RANGE

55 ~ 110

80 ~ 160

UTC UNISONIC TECHNOLOGIES CO., LTD.

www.unisonic.com

QW-R214-007,A

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与2SB688LR相关器件

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