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2SB632_15 PDF预览

2SB632_15

更新时间: 2024-11-26 01:17:03
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
4页 217K
描述
Silicon PNP Power Transistors

2SB632_15 数据手册

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JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB632 2SB632K  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2SD612/612K  
·High collector dissipation  
·Wide ASO(Safe Operating Area)  
APPLICATIONS  
·25V/35V, 2A low-frequency  
power amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-25  
-35  
-25  
-35  
-5  
UNIT  
2SB632  
2SB632K  
2SB632  
2SB632K  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Open collector  
V
A
A
-2  
ICM  
-3  
Ta=25  
TC=25℃  
1
PD  
Total power dissipation  
W
10  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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