Datasheet > 2SB634

2SB634

更新时间： 2022-12-26 14:36:36

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	199K
描述
Silicon PNP Power Transistor

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2SB634 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB634

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·High Power Dissipation

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-120

-6

UNIT

Collector Current-Continuous

Collector Current-Peak

-7

I_CM

-10

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

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