5秒后页面跳转
2SB633PE PDF预览

2SB633PE

更新时间: 2024-01-13 08:50:18
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
4页 32K
描述
BJT

2SB633PE 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83最大集电极电流 (IC):6 A
集电极-发射极最大电压:85 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):15 MHz

2SB633PE 数据手册

 浏览型号2SB633PE的Datasheet PDF文件第2页浏览型号2SB633PE的Datasheet PDF文件第3页浏览型号2SB633PE的Datasheet PDF文件第4页 
Ordering number : ENN6662  
PNP / NPN Epitaxial Planar Silicon Transistors  
2SB633P / 2SD613P  
85V / 6A, AF 35 to 45W Output Applications  
Package Dimensions  
Features  
High breakdown voltage, V  
high current 6A.  
85V,  
unit : mm  
2010C  
CEO  
AF 35 to 45W output.  
[2SB633P / 2SD613P]  
10.2  
4.5  
3.6  
5.1  
1.3  
1.2  
0.8  
0.4  
1 : Base  
2 : Collector  
3 : Emitter  
1
2
3
Specifications  
( ) : 2SB633P  
2.55  
2.55  
SANYO : TO-220  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
()100  
()85  
V
()6  
V
I
()6  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
()10  
A
CP  
P
Tc=25°C  
60  
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=(--)40V, I =0  
Unit  
min  
max  
Collector Cutoff Current  
Emitter Cutoff Current  
I
V
V
(--)0.1  
(--)0.1  
mA  
mA  
CBO  
CB  
E
I
=(--)4V, I =0  
C
EBO  
EB  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
13001 TS IM TA-3082 No.6662-1/4  

与2SB633PE相关器件

型号 品牌 描述 获取价格 数据表
2SB633PF ETC BJT

获取价格

2SB634 ISC Silicon PNP Power Transistor

获取价格

2SB634 SAVANTIC Silicon PNP Power Transistors

获取价格

2SB637(K) RENESAS Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

获取价格

2SB637(K) HITACHI 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格

2SB637(K)RF RENESAS Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

获取价格