Datasheet > 2SB642Q

2SB642Q

更新时间： 2024-11-24 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	76K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| SC-71

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中文翻译

获取价格

数据手册

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2SB642Q 数据手册

Transistor

2SB0642 (2SB642)

Silicon PNP epitaxial planer type

For low-power general amplification

Unit: mm

6.9 0.1

2.5 0.1

1.0

1.5

1.5 R0.9

Features

High foward current transfer ratio h_FE

ꢀ

ꢁ

R0.9

ꢁ

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

ꢀ

0.55 0.1

0.45 0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–50

–7

2.5

–200

–100

400

˚C

I_C

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

ꢀ

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–1

Unit

µA

V_CB= –20V, I_E= 0

V_CE= –20V, I_B= 0

_C= –10µA, I_E= 0

Collector cutoff current

I_CEO

–1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

–60

–50

–7

I_C= –2mA, I_B= 0

I_E= –10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= –10V, I_C= –2mA

I_C= –100mA, I_B= –10mA

160

460

–1

Collector to emitter saturation voltage V_CE(sat)

MHz

Transition frequency

f_T

V_CB= –10V, I_E= 2mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

3.5

^*h_FERank classification

Rank

h_FE

160 ~ 260

210 ~ 340

290 ~ 460

Note.) The Part number in the Parenthesis shows conventional part number.

12 3 4

中文翻译

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