Datasheet > 2SB645_2014

2SB645_2014

更新时间： 2024-09-22 01:23:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	158K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB645_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB645

DESCRIPTION

·With TO-3 package

·High power dissipation

APPLICATIONS

·For power switching and general

purpose applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-200

-5

UNIT

Open emitter

Open base

Open collector

-15

I_B

Base current

-5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

150

℃

T_j

150

T_stg

-65~150

12 3

中文翻译

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与2SB645_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB645O	ISC	获取价格	Transistor
2SB645R	ISC	获取价格	Transistor
2SB646	HITACHI	获取价格	LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A
2SB646A	HITACHI	获取价格	LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A
2SB646A-B	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), PNP
2SB646A-B	RENESAS	获取价格	SMALL SIGNAL TRANSISTOR
2SB646A-C	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), PNP
2SB646A-C	RENESAS	获取价格	SMALL SIGNAL TRANSISTOR
2SB646ARF	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
2SB646ARR	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon