生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.75 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 170 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.6 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB645 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB645 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB645_15 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB645_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB645O | ISC |
获取价格 |
Transistor | |
2SB645R | ISC |
获取价格 |
Transistor | |
2SB646 | HITACHI |
获取价格 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A | |
2SB646A | HITACHI |
获取价格 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A | |
2SB646A-B | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), PNP | |
2SB646A-B | RENESAS |
获取价格 |
SMALL SIGNAL TRANSISTOR |