Datasheet > 2SB506

2SB506

更新时间： 2024-09-16 05:57:51

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	108K
描述
Silicon PNP Power Transistors

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中文翻译

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2SB506 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB506

DESCRIPTION

·With TO-3 package

·Wide area of safe operation

APPLICATIONS

·Low frequency power amplification

·Power switching application

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-150

-100

-7

UNIT

Open emitter

Open base

Open collector

-5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

T_j

100

T_stg

-55~100

ꢀ

12 3

中文翻译

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