Datasheet > 2SB507

2SB507

更新时间： 2024-10-15 14:52:19

品牌	Logo	应用领域
鲁光 - LGE		局域网放大器双极型晶体管
页数	文件大小	规格书
2页	646K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SB507 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	60
Collector Current - Continuous：	3	DC current gain - Min：	40
DC current gain - Max：	320	Transition frequency：	8
Package：	TO-220AB	Storage Temperature Range：	-55-150
class：	Transistors

2SB507 数据手册

2SB507(PNP)

TO-220 Transistor

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Features

Low Collector-Emitter Saturation Voltage

Vce(sat)=-1V(MAX)@I_C=-2A,I_B=-0.2A

DC Current Gain h_FE=40~320@IC=-1A

Complementray to NPN 2SD313

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Dimensions in inches and (millimeters)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-60

Units

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-3

P_C

1.75

150

℃

T_J

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-60

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-100μA, I_E=0

I_C=-10mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-20V, I_E=0

-100

-5

μA

Collector cut-off current

I_CEO

V_CE=-60V, I_E=0

Emitter cut-off current

I_EBO

V_EB=-4V, I_C=0

-1

(1)

h_FE(1)

V_CE=-2V, I_C=-1A

V_CE=-2V, I_C=-0.1A

I_C=-2A, I_B=-200mA

V_CE=-2V, I_C=-1A

V_CE=-5V, I_C=-500mA,f=1MHz

320

DC current gain ⁽¹⁾

(1)

h_FE(2)

(1)

Collector-emitter saturation voltage⁽¹⁾

Base-emitter voltage⁽¹⁾

V_CE(sat)

-1

(1)

V_BE

-1.5

Transition frequency

f_T

MHz

⁽¹⁾Pulse Test: Pulse Width=300μs,Duty Cycle≤2.0%

CLASSIFICATION OF h_FE(1)

Rank

Range

40-80

60-120

100-200

160-320

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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与2SB507相关器件

型号	品牌	获取价格	描述	数据表
2SB507C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB507D	SANYO	获取价格	PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE
2SB507E	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB507F	MOSPEC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB508	SANYO	获取价格	PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE
2SB508C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB508D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB508E	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB508F	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB509	SAVANTIC	获取价格	Silicon PNP Power Transistors