是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.66 | Is Samacsys: | N |
最大集电极电流 (IC): | 3 A | 配置: | Single |
最小直流电流增益 (hFE): | 40 | JESD-609代码: | e0 |
最高工作温度: | 140 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 30 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
标称过渡频率 (fT): | 8 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB507C | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB507D | SANYO |
获取价格 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE | |
2SB507E | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB507F | MOSPEC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB508 | SANYO |
获取价格 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE | |
2SB508C | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB508D | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB508E | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB508F | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
2SB509 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors |