Datasheet > 2SB507

2SB507

更新时间： 2024-09-15 22:35:55

品牌	Logo	应用领域
永盛 - Wing Shing		晶体放大器晶体管功率放大器局域网
页数	文件大小	规格书
1页	28K
描述
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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中文翻译

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数据手册

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2SB507 数据手册

2SB507

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

TO-220

Complement to 2SD313

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25°c)

Junction Temperature

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-7

-3

150

-50~150

25°c

Tstg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characterristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

Test Condition

Min

Typ

Max

Unit

ICBO

IEBO

hFE1

VCB= -60V , IE=0

VEB= -7V , IC=0

VCE= -2V , IC=-1A

-100

320

µA

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

VCE(sat) IC=-2A ,

fT VCE=- 5V , IC=-0.5A

IB=-0.2A

-1.0

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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2SB507E	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
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2SB508	SANYO	获取价格	PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE
2SB508C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB508D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB508E	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB508F	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
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