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2SB1094-L PDF预览

2SB1094-L

更新时间: 2024-11-25 05:13:19
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网放大器晶体管
页数 文件大小 规格书
4页 120K
描述
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SB1094-L 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SB1094  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIER  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
• The 2SB1094 features ratings covering a wide range of  
applications and is ideal for power supplies or a variety of drives  
in audio and other equipment.:  
VCEO ≥ −60 V, VEBO ≥ −7.0 V, IC(DC) ≤ −3.0 A  
• Mold package that does not require an insulating board or  
insulation bushing  
• Complementary transistor with 2SD1585  
QUALITY GRADES  
• Standard  
Please refer to “Quality Grades on NEC Semiconductor Devices”  
(Document No. C11531E) published by NEC Corporation to know  
the specification of quality grade on the devices and its  
recommended applications.  
Electrode Connection  
1. Base  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
2. Collector  
Parameter  
Symbol  
VCBO  
Ratings  
60  
Unit  
V
3. Emitter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
60  
VCEO  
V
7.0  
VEBO  
V
3.0  
IC(DC)  
A
5.0  
IC(pulse)*  
IB(DC)  
A
0.6  
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
15  
W
W
°C  
°C  
2.0  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16186EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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