2SB1094M

更新时间： 2024-11-19 23:20:03

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
4页	122K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| SOT-186

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中文翻译

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数据手册

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2SB1094M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SB1094

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIER

FEATURES

PACKAGE DRAWING (UNIT: mm)

• The 2SB1094 features ratings covering a wide range of

applications and is ideal for power supplies or a variety of drives

in audio and other equipment.:

V^CEO≥ −60 V, V^EBO≥ −7.0 V, I^C(DC)≤ −3.0 A

• Mold package that does not require an insulating board or

insulation bushing

• Complementary transistor with 2SD1585

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to know

the specification of quality grade on the devices and its

recommended applications.

Electrode Connection

1. Base

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

2. Collector

Parameter

Symbol

V^CBO

Ratings

−60

Unit

3. Emitter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

−60

V^CEO

−7.0

V^EBO

−3.0

I^C(DC)

−5.0

I^C(pulse)*

I^B(DC)

−0.6

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16186EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

中文翻译

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