Datasheet > 2SB1097_2014

2SB1097_2014

更新时间： 2024-01-20 09:54:33

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	165K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1097_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1097

DESCRIPTION

·With TO-220Fa package

·Low collector saturation voltage

·Complement to type 2SD1588

APPLICATIONS

·For low frequency power amplifier and

low speed switching applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-80

UNIT

Open emitter

Open base

-60

Open collector

-5

-7

T_a=25℃

T_C=25℃

2.0

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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与2SB1097_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB1097K	ISC	获取价格	Transistor
2SB1097-K	RENESAS	获取价格	7A, 60V, PNP, Si, POWER TRANSISTOR
2SB1097-K	NEC	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1097L	ISC	获取价格	暂无描述
2SB1097-L	RENESAS	获取价格	7A, 60V, PNP, Si, POWER TRANSISTOR
2SB1097-L	NEC	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1097M	ISC	获取价格	Transistor
2SB1097-M	RENESAS	获取价格	7A, 60V, PNP, Si, POWER TRANSISTOR
2SB1097M-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,7A I(C),TO-220VAR
2SB1098	JMNIC	获取价格	Silicon PNP Power Transistors