Datasheet > 2SB1102

2SB1102

更新时间： 2024-11-24 06:26:11

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	91K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1102 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1102

DESCRIPTION

·With TO-220 package

·Complement to type 2SD1602

·DARLINGTON

·High DC current gain

APPLICATIONS

·For low frequency power amplifier

applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

-80

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

-80

Open collector

-7

-4

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

-8

P_C

T_C=25ꢀ

ꢀ

T_j

150

-55~150

T_stg

ꢀ

12 3

中文翻译

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