Datasheet > 2SB0951|2SB951

2SB0951|2SB951

更新时间： 2024-11-28 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	96K
描述
Power Device - Power Transistors - General-Purpose power amplification

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2SB0951|2SB951 数据手册

Power Transistors

2SB0951 (2SB951), 2SB0951A (2SB951A)

Silicon PNP epitaxial planar type darlington

Unit: mm

For midium-speed switching

10.0 0.2

5.5 0.2

4.2 0.2

2.7 ^0.2

Complementary to 2SD1277 and 2SD1277A

■ Features

φ 3.1 0.1

• High forward current transfer ratio h_FE

• High-speed switching

• Full-pack package which can be installed to the heat sink with one screw

1.3 0.2

1.4 0.1

■ Absolute Maximum Ratings T_C= 25°C

+0.2

–0.1

0.5

Parameter

Symbol

Rating

Unit

0.8 0.1

2SB0951

2SB0951A

2SB0951

2SB0951A

V_CBO

−60

Collector-base voltage

(Emitter open)

2.54 0.3

5.08 0.5

−80

V_CEO

−60

1: Base

Collector-emitter voltage

(Base open)

2: Collector

3: Emitter

EIAJ: SC-67

−80

2 3

Emitter-base voltage (Collector open) V_EBO

−7

TO-220F-A1 Package

Collector current

Peak collector current

Collector power

I_C

I_CP

P_C

−8

Internal Connection

−12

dissipation

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−60

−80

Typ

Max

Unit

2SB0951

2SB0951A

2SB0951

2SB0951A

V_CEO

I_C= −30 mA, I_B= 0

Collector-emitter voltage

(Base open)

I_CBO

V_CB= −60 V, I_E= 0

V_CB= −80 V, I_E= 0

V_EB= −7 V, I_C= 0

−100

−2

µA

Collector-base cutoff

current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

V_CE= −3 V, I_C= −4 A

V_CE= −3 V, I_C= −8 A

1000

500

10 000



h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −4 A, I_B= −8 mA

V_BE(sat)I_C= −4 A, I_B= −8 mA

−1.5

−2.0

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= −1 A, f = 1 MHz

0.5

2.0

1.0

MHz

µs

I_C= −4 A, I_B1= −8 mA, I_B2= 8 mA

V_CC= −50 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

1000 to 2500 2000 to 5000 4000 to 10000

Note) The part numbers in the parenthesis show conventional part number.

Publication date: April 2003

SJD00030BED

12 3 4

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与2SB0951|2SB951相关器件

型号	品牌	获取价格	描述	数据表
2SB0951A	PANASONIC	获取价格	For midium-speed switching
2SB0951A(2SB951A)	ETC	获取价格	パワーデバイス－パワートランジスタ－汎用電力増幅
2SB0951A\|2SB951A	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0951AP	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 8A I(C) \| TO-220AB
2SB0951AQ	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 8A I(C) \| TO-220AB
2SB0951P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-220AB
2SB0951Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-220AB
2SB0951R	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0952	PANASONIC	获取价格	For Low-Voltage Switching
2SB0952(2SB952)	ETC	获取价格	パワーデバイス－パワートランジスタ－汎用電力増幅

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