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2SB0953A(2SB953A)

更新时间： 2024-11-25 23:20:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 76K
描述
Power Device - Power Transistors - General-Purpose power amplification

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2SB0953A(2SB953A) 数据手册

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Power Transistors  
2SB0953, 2SB0953A (2SB953, 2SB953A)  
Silicon PNP epitaxial planar type  
For low-voltage switching  
Complementary to 2SD1444 and 2SD1444A  
Unit: mm  
10.0 0.2  
5.5 0.2  
4.2 0.2  
Features  
I
G
2.7 0.2  
Low collector to emitter saturation voltage VCE(sat)  
High-speed switching  
G
G
Full-pack package which can be installed to the heat sink with  
one screw  
φ3.1 0.1  
Absolute Maximum Ratings (T =25˚C)  
I
C
1.3 0.2  
Parameter  
Symbol  
Ratings  
Unit  
1.4 0.1  
Collector to  
2SB0953  
2SB0953A  
2SB0953  
–40  
+0.2  
–0.1  
VCBO  
V
0.5  
base voltage  
Collector to  
–50  
0.8 0.1  
–20  
VCEO  
V
2.54 0.25  
emitter voltage 2SB0953A  
Emitter to base voltage  
Peak collector current  
Collector current  
–40  
5.08 0.5  
VEBO  
ICP  
–5  
V
A
A
1
2
3
–12  
1:Base  
2:Collector  
3:Emitter  
TO–220 Full Pack Package(a)  
IC  
–7  
Collector power TC=25°C  
30  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
I
C
Parameter  
Symbol  
Conditions  
min  
typ  
max  
–50  
–50  
–50  
Unit  
µA  
µA  
V
Collector cutoff  
2SB0953  
VCB = –40V, IE = 0  
VCB = –50V, IE = 0  
EB = –5V, IC = 0  
ICBO  
current  
2SB0953A  
Emitter cutoff current  
IEBO  
VCEO  
hFE1  
V
Collector to emitter 2SB0953  
voltage 2SB0953A  
–20  
–40  
45  
IC = –10mA, IB = 0  
VCE = –2V, IC = – 0.1A  
Forward current transfer ratio  
*
hFE2  
VCE = –2V, IC = –2A  
90  
260  
– 0.6  
–1.5  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –5A, IB = – 0.16A  
V
V
IC = –5A, IB = – 0.16A  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCE = –10V, IC = – 0.5A, f = 10MHz  
VCB = –10V, IE = 0, f = 1MHz  
150  
140  
0.1  
0.5  
0.1  
MHz  
pF  
µs  
Cob  
ton  
tstg  
tf  
Storage time  
IC = –2A, IB1 = –66mA, IB2 = 66mA  
µs  
Fall time  
µs  
*hFE2 Rank classification  
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the  
rank classification.  
Rank  
hFE2  
Q
P
90 to 180  
130 to 260  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1
1234

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与2SB0953A(2SB953A)相关器件

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2SB0953A|2SB953A ETC

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 		Power Device - Power Transistors - General-Purpose power amplification
2SB0953AP ETC

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 		TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 7A I(C) | TO-220AB
2SB0953APQ ETC

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 		TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 7A I(C) | TO-220AB
2SB0953AQ ETC

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 		TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 7A I(C) | TO-220AB
2SB0953AR PANASONIC

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 		Power Bipolar Transistor, 7A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0953P ETC

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 		TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 7A I(C) | TO-220AB
2SB0953PQ PANASONIC

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 		Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB0953Q ETC

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 		TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 7A I(C) | TO-220AB
2SB0954/2SB0954A(2SB954/2SB954A) ETC

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 		2SB0954. 2SB0954A (2SB954. 2SB954A) - PNP Transistor
2SB0954AP ETC

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 		TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-220AB

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