Datasheet > 2SB0953A|2SB953A

2SB0953A|2SB953A

更新时间： 2024-11-22 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	96K
描述
Power Device - Power Transistors - General-Purpose power amplification

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2SB0953A|2SB953A 数据手册

Power Transistors

2SB0953 (2SB953), 2SB0953A (2SB953A)

Silicon PNP epitaxial planar type

For low-voltage switching

Unit: mm

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• High-speed switching

10.0 0.2

5.5 0.2

4.2 0.2

2.7 ^0.2

• Full-pack package which can be installed to the heat sink with one screw

φ 3.1 0.1

■ Absolute Maximum Ratings T_C= 25°C

Parameter

Symbol

Rating

Unit

1.3 0.2

1.4 0.1

2SB0953

2SB0953A

2SB0953

2SB0953A

V_CBO

−40

Collector-base voltage

(Emitter open)

+0.2

–0.1

0.5

−50

0.8 0.1

V_CEO

−20

Collector-emitter voltage

(Base open)

2.54 0.3

5.08 0.5

−40

Emitter-base voltage (Collector open) V_EBO

−5

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

Collector current

Peak collector current

Collector power

I_C

I_CP

P_C

−7

2 3

−12

TO-220F-A1 Package

dissipation

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−20

−40

Typ

Max

Unit

2SB0953

2SB0953A

2SB0953

2SB0953A

V_CEO

I_C= −10 mA, I_B= 0

Collector-emitter voltage

(Base open)

I_CBO

V_CB= −40 V, I_E= 0

V_CB= −50 V, I_E= 0

V_EB= −5 V, I_C= 0

−50

µA

Collector-base cutoff

current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

µA

V_CE= −2 V, I_C= − 0.1 A

V_CE= −2 V, I_C= −2 A



h_FE2

260

− 0.6

−1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −5 A, I_B= −0.16 A

V_BE(sat)I_C= −5 A, I_B= − 0.16 A

f_T

V_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

150

140

MHz

Collector output capacitance

C_ob

V_CB= −10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Turn-on time

Storage time

Fall time

t_on

t_stg

t_f

I_C= −2 A, I_B1= −66 mA, I_B2= 66 mA

V_CC= −20 V

0.1

0.5

0.1

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE2

60 to 120

90 to 180

130 to 260

Note) The part numbers in the parenthesis show conventional part number.

Publication date: April 2003

SJD00032BED

12 3 4

中文翻译

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与2SB0953A|2SB953A相关器件

型号	品牌	获取价格	描述	数据表
2SB0953AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 7A I(C) \| TO-220AB
2SB0953APQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 7A I(C) \| TO-220AB
2SB0953AQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 7A I(C) \| TO-220AB
2SB0953AR	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0953P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 7A I(C) \| TO-220AB
2SB0953PQ	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB0953Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 7A I(C) \| TO-220AB
2SB0954/2SB0954A(2SB954/2SB954A)	ETC	获取价格	2SB0954. 2SB0954A (2SB954. 2SB954A) - PNP Transistor
2SB0954AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-220AB
2SB0954AQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-220AB

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