Datasheet > 2SB0956S

2SB0956S

更新时间： 2024-11-25 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SC-62

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中文翻译

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数据手册

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2SB0956S 数据手册

Transistor

2SB0956 (2SB956)

Silicon PNP epitaxial planer type

For low-frequency power amplification

Complementary to 2SD1280

Unit: mm

1.5 0.1

4.5 0.1

1.6 0.2

Features

Large collector power dissipation P_C.

Low collector to emitter saturation voltage V_CE(sat)

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

45°

0.4 0.08

0.4 0.04

0.5 0.08

1.5 0.1

Absolute Maximum Ratings (Ta=25˚C)

3.0 0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–20

marking

–20

–5

–2

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

I_C

–1

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : H

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

V_CB= –10V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

–1

V_CEO

V_EBO

I_C= –1mA, I_B= 0

–20

–5

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –2V, I_C= –500mA^*2

V_CE= –2V, I_C= –1.5A^*2

I_C= –1A, I_B= –50mA^*2

I_C= –500mA, I_B= –50mA

V_CB= –6V, I_E= 50mA, f = 200MHz

130

280

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.5

–1.2

Transition frequency

f_T

200

MHz

Collector output capacitance

C_ob

V_CB= –6V, I_E= 0, f = 1MHz

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

130 ~ 210

180 ~ 280

Marking Symbol

Note.) The Part number in the Parenthesis shows conventional

part number.

12 3

中文翻译

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与2SB0956S相关器件

型号	品牌	获取价格	描述	数据表
2SB0967	PANASONIC	获取价格	Small Signal Bipolar Transistor, 5A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon
2SB0968	PANASONIC	获取价格	For Low-Frequency Output Amplification
2SB0968(2SB968)	ETC	获取价格	パワーデバイス－パワートランジスタ－汎用電力増幅
2SB0968\|2SB968	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0968Q	PANASONIC	获取价格	Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB0968R	PANASONIC	获取价格	Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB0970	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For low-voltage output amplification)
2SB0970(2SB970)	ETC	获取价格	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB0970\|2SB970	ETC	获取价格	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB0970R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 10V V(BR)CEO \| 500MA I(C) \| TO-236AB

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