2SB0952P

更新时间： 2024-11-23 13:04:11

品牌	Logo	应用领域
松下 - PANASONIC		晶体开关晶体管功率双极晶体管
页数	文件大小	规格书
4页	85K
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中文翻译

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2SB0952P 数据手册

Power Transistors

2SB0952 (2SB952), 2SB0952A (2SB952A)

Silicon PNP epitaxial planar type

For low-voltage switching

Unit: mm

8.5 0.2

6.0 0.2

3.4 0.3

1.0 0.1

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• High-speed switching

• N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

0 to 0.4

R = 0.5

1.0 0.1

0.8 0.1

■ Absolute Maximum Ratings T_C= 25°C

2.54 0.3

1.4 0.1

0.4 0.1

Parameter

Symbol

Rating

−40

Unit

5.08 0.5

(8.5)

(6.0)

2SB0952

2SB0952A

2SB0952

2SB0952A

V_CBO

Collector-base voltage

(Emitter open)

1.3

−50

V_CEO

−20

Collector-emitter voltage

(Base open)

−40

(6.5)

Emitter-base voltage (Collector open) V_EBO

−5

1: Base

2: Collector

3: Emitter

Collector current

I_C

I_CP

P_C

−7

Peak collector current

Collector power dissipation

−12

N-G1 Package

Note) Self-supported type package is also prepared.

T_a= 25°C

1.3

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−20

−40

Typ

Max

Unit

2SB0952

2SB0952A

2SB0952

2SB0952A

V_CEO

I_C= −10 mA, I_B= 0

Collector-emitter voltage

(Base open)

I_CBO

V_CB= −40 V, I_E= 0

V_CB= −50 V, I_E= 0

V_EB= −5 V, I_C= 0

−50

µA

Collector-base cutoff

current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

µA

V_CE= −2 V, I_C= − 0.1 A

V_CE= −2 V, I_C= −2 A



h_FE2

260

− 0.6

−1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −5 A, I_B= − 0.16 A

V_BE(sat)I_C= −5 A, I_B= − 0.16 A

f_T

V_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

150

140

MHz

Collector output capacitance

C_ob

V_CB= −10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Turn-on time

Storage time

Fall time

t_on

t_stg

t_f

0.1

0.5

0.1

µs

I_C= −2 A

I_B1= −66 mA, I_B2= 66 mA

V_CC= −20 V

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE2

60 to 120

90 to 180

130 to 260

Note) The part numbers in the parenthesis show conventional part number.

Publication date: March 2003

SJD00031AED

12 3 4

中文翻译

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与2SB0952P相关器件

型号	品牌	获取价格	描述	数据表
2SB0952Q	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB0952R	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB0953	PANASONIC	获取价格	For Low-Voltage Switching
2SB0953(2SB953)	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0953/2SB0953A(2SB953/2SB953A)	ETC	获取价格	2SB0953. 2SB0953A (2SB953. 2SB953A) - PNP Transistor
2SB0953\|2SB953	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0953A	PANASONIC	获取价格	For Low-Voltage Switching
2SB0953A(2SB953A)	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0953A\|2SB953A	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0953AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 7A I(C) \| TO-220AB

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