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2SA2066_09 PDF预览

2SA2066_09

更新时间: 2022-09-16 17:21:30
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器开关
页数 文件大小 规格书
5页 156K
描述
High-Speed Switching Applications DC-DC Converter Applications

2SA2066_09 数据手册

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2SA2066  
TOSHIBA Transistor Silicon PNP Epitaxial Type  
2SA2066  
High-Speed Switching Applications  
Unit: mm  
DC-DC Converter Applications  
High DC current gain: h = 200 to 500 (I = 0.2 A)  
FE C  
Low collector-emitter saturation voltage: V  
= 0.19 V (max)  
CE (sat)  
High-speed switching: t = 25 ns (typ.)  
f
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
10  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
7  
DC  
I
2.0  
3.5  
200  
2.0  
C
Collector current  
Base current  
A
mA  
W
Pulse  
I
CP  
I
B
JEDEC  
JEITA  
t = 10 s  
DC  
P
C
Collector power  
dissipation  
(Note 1)  
1.0  
SC-62  
2-5K1A  
Junction temperature  
T
150  
°C  
°C  
j
TOSHIBA  
Storage temperature range  
T
stg  
55 to 150  
Weight: 0.05 g (typ.)  
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu  
2
area: 645 mm )  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-12-21  

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