Datasheet > 2SA2066_09

2SA2066_09

更新时间： 2024-11-25 07:29:51

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器开关
页数	文件大小	规格书
5页	156K
描述
High-Speed Switching Applications DC-DC Converter Applications

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2SA2066_09 数据手册

2SA2066

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2066

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

•

High DC current gain: h = 200 to 500 (I = −0.2 A)

FE C

Low collector-emitter saturation voltage: V

= −0.19 V (max)

CE (sat)

High-speed switching: t = 25 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−20

−10

Collector-emitter voltage

Emitter-base voltage

−7

−2.0

−3.5

−200

2.0

Collector current

Base current

Pulse

JEDEC

JEITA

―

t = 10 s

Collector power

dissipation

(Note 1)

1.0

SC-62

2-5K1A

Junction temperature

150

°C

TOSHIBA

Storage temperature range

stg

−55 to 150

Weight: 0.05 g (typ.)

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu

area: 645 mm )

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4 5

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