2SA2066
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2066
High-Speed Switching Applications
Unit: mm
DC-DC Converter Applications
•
•
•
High DC current gain: h = 200 to 500 (I = −0.2 A)
FE C
Low collector-emitter saturation voltage: V
= −0.19 V (max)
CE (sat)
High-speed switching: t = 25 ns (typ.)
f
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−20
−10
V
V
V
Collector-emitter voltage
Emitter-base voltage
−7
DC
I
−2.0
−3.5
−200
2.0
C
Collector current
Base current
A
mA
W
Pulse
I
CP
I
B
JEDEC
JEITA
―
t = 10 s
DC
P
C
Collector power
dissipation
(Note 1)
1.0
SC-62
2-5K1A
Junction temperature
T
150
°C
°C
j
TOSHIBA
Storage temperature range
T
stg
−55 to 150
Weight: 0.05 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
2
area: 645 mm )
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21