Datasheet > 2SA2071

2SA2071

更新时间： 2024-11-22 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1003K
描述
PNP Transistor

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中文翻译

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数据手册

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2SA2071 数据手册

SMD Type

Transistors

PNP Transistors

2SA2071-Q

SOT-89

Unit:mm

1.70 0.1

■ Features

● Collector Current Capability IC=-3A

● Collector Emitter Voltage V^CEO=-60V

● High speed switching.

0.42 0.1

0.46 0.1

● Complements the 2SC5824

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-6

Collector Current - Continuous

Collector Current - Pulse

-3

-6

0.5

Collector Power Dissipation

(Note.1)

℃

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

Note.1:Mounted on a 40×40×0.7 (mm) ceramic substrate

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-60

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I

E=0

C=0

CBO

EBO

CB= -40 V , I

^EB= -4V , I

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-2 A, I

=-200mA

-0.5

-1.2

270

=-2 A, I

stg

CE= -2V, I

C= -100mA

120

Turn-on time

150

= −3A IB1= −300mA

^B2=300mA V^CC= −25V

Storage time

Fall time

Collector output capacitance

Transition frequency

^CB= -10V, I

^CE= -10V, I

= 0,f=1MHz

mA,f=10MHz

180

MHz

100

■ Classification of hfe

Range

120-270

Marking

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