Datasheet > 2SA2071_11

2SA2071_11

更新时间： 2024-11-21 07:29:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	933K
描述
Power transistor

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中文翻译

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数据手册

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2SA2071_11 数据手册

Power transistor (60V, 3A)

2SA2071

Features

Dimensions (Unit : mm)



1) High speed switching. (Tf : Typ. : 20ns at IC = 3A)

2) Low saturation voltage, typically

MPT3



(Typ. : 200mV at IC = 2A, IB = 0.2A)

3) Strong discharge power for inductive load and capacitance load.

4) Complements the 2SC5824

(1)Base(Gate)

(2)Collector(Drain)

(3)Emitter(Sourse)

Each lead has same dimensions

Abbreviated symbol : UN

Applications

Low Frequency Amplifier

High speed switching

Structure

PNP Silicon epitaxial planar transistor

Packaging specifications

Package

Taping

T100

Type

Code

Basic ordering unit (pieces)

1000

2SA2071

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−60

Unit

VCBO

VCEO

VEBO

−6

−3

−6

500

2.0

°C

Collector current

Power dissipation

∗1

∗2

Tstg

150

Junction temperature

Range of storage temperature

∗1 Pw=100ms

−55 to +150

∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate

www.rohm.com

2011.03 - Rev.C

1/3

12 3 4

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