Datasheet > 晶体管 > 其他晶体管> 2SA2068

2SA2068

更新时间： 2024-01-14 14:23:54

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
2页	48K
描述
SMALL-SIGNAL TRANSISTOR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA2068 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SA2068 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

PRELIMINARY

2SA2068

Notics:This is not a final specification.

FOR LOW

ꢀFREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

Some parametric limits are subject to change. ꢀ

DESCRIPTION

OUTLINE DRAWING

Unit

：ｍｍ

ꢀ2SA2068isa super mini package resin sealed

silicon PNP epitaxial transistor,

It is designed for low frequency application.

Since it is a super-thin flat lead type package,a high-density

ꢀmountingarepossible.

0.8

0.2

Complementary with 2SA1235A.

①

②

FEATURE

③

●Super-thin flat lead type package.ꢀt=0.45mm

●Excellent linearly of DC forward current gain.

●Low collector to emitter saturation voltage

VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)

APPLICATION

For hybrid IC,small type machine low frequency voltage amplify

application.

MAXIMUM RATINGS（Ta=25℃）

JEITA：

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

-50

Unit

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

TERMINAL CONNECTER

①：BASE

-6

-50

②：EMITTER

-200

℃

③：COLLECTOR

P_c

Collector dissipation

Junction temperature

Storage temperature

100

T_j

＋125

-55～＋125

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

―

Min

-50

Max

―

Collector to Emitter Breakdown voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C toE saturation voltage

Gain bandwidth product

Collector output capacitance

Noise figure

V(BR)CEO

I =-100μA, R _BE=∞

-0.1

μA

ICBO

IEBO

hFE

V _CB=-50V, I _E=0mA

V _EB=-6V, I _C=0mA

V _CE=-6V, I _C=-1mA

V _CE=-6V, I _C=-0.1mA

-0.1

800

μA

150

※

VCE(sat) I =-100mA, I _B=-10mA

- 0.3

V _CE=-6V, I _E=10mA

200

4.0

MHz

Cob

V _CB=-6V, I _E=0mA,f=1MHz

V _CE=-6V, I _E=0.3mA,f=100Hz,RG=10kΩ

ꢀꢀꢀꢀꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

※ꢀItshows hFE classification in below table.

Item

hFE

150～300

250～500

400～800

Abbrivation

ISAHAYA

ꢀELECTRONICSꢀCORPORATION

下载PDF

与2SA2068相关器件

型号	品牌	描述	获取价格	数据表
2SA2068C	ISAHAYA	Transistor	获取价格
2SA2068D	ISAHAYA	暂无描述	获取价格
2SA2068E	ISAHAYA	SMALL-SIGNAL TRANSISTOR	获取价格
2SA2068F	ISAHAYA	SMALL-SIGNAL TRANSISTOR	获取价格
2SA2068G	ISAHAYA	SMALL-SIGNAL TRANSISTOR	获取价格
2SA2069	TOSHIBA	High-Speed Switching Applications DC-DC Converter Applications	获取价格