生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.69 |
最高工作温度: | 150 °C | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA2016G-TN3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SA2016L-AB3-R | UTC |
获取价格 |
PNP EPITAXIAL PLANAR TRANSISTOR | |
2SA2016L-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor | |
2SA2016L-TN3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SA2016-TD-E | ONSEMI |
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DC / DC Converter Applications | |
2SA2017 | ETC |
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2SA2017E | ROHM |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SA2018 | KEXIN |
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Low Frequency Transistor | |
2SA2018 | TYSEMI |
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A collector current is large Collector saturation voltage is low. VCE(sat) 250mA | |
2SA2018 | ROHM |
获取价格 |
Low frequency transistor |