Datasheet > 2SA2018

2SA2018

更新时间： 2024-11-22 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	273K
描述
12V,0.5A,General Purpose PNP Bipolar Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA2018 数据手册

Product Specification

LOW FREQUENCY TRANSISTOR

2SA2018

FEATURES



A collceter current is large



Collecter saturation voltage is low

_CE(sat)≤250mV @ I_C= -200mA / I_B= -10mA

APPLICATIONS



For switching, for muting

SOT-523

ORDERING INFORMATION

Type No.

2SA2018

Marking

Package Code

SOT-523

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Limits

-15

Unit

Collector-base Voltage

Collector-emitter Voltage

Emitter-base Voltage

Collector Current

-12

-6

-500

°C

P_d

Collector Power Dissipation

Storage Temperature Range

Junction Temperature

150

T_STG

T_J

-55 to +150

150

STM0407A

www.gmesemi.com

12 3 4

中文翻译

下载PDF

与2SA2018相关器件

型号	品牌	获取价格	描述	数据表
2SA2018_1	ROHM	获取价格	Low frequency transistor
2SA2018E3	ROHM	获取价格	Various products are available in lineup developed focusing on energy-saving and high reli
2SA2018E3 (新产品)	ROHM	获取价格	Various products are available in lineup developed focusing on energy-saving and high reli
2SA2018E3HZG (新产品)	ROHM	获取价格	2SA2018E3HZG是一款车规级高可靠性双极晶体管。
2SA2018F	SECOS	获取价格	PNP Silicon General Purpose Transistor
2SA2018H	ETC	获取价格	Transistors
2SA2018HT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SC-89,
2SA2018T146	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, EMT3, S
2SA2018TL	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 500MA I(C) \| SOT-416
2SA202	ETC	获取价格	2SA203