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2SA2023 PDF预览

2SA2023

更新时间： 2024-01-07 16:34:53
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管局域网
页数 文件大小 规格书
4页 44K
描述
60V / 5A High-Speed Switching Applications

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2SA2023 技术参数

生命周期：Transferred零件包装代码：SIP
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.75风险等级：5.44
Is Samacsys：N外壳连接：ISOLATED
最大集电极电流 (IC)：5 A集电极-发射极最大电压：60 V
配置：SINGLE最小直流电流增益 (hFE)：110
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：PNP
最大功率耗散 (Abs)：10 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHzBase Number Matches：1

2SA2023 数据手册

 浏览型号2SA2023的Datasheet PDF文件第2页浏览型号2SA2023的Datasheet PDF文件第3页浏览型号2SA2023的Datasheet PDF文件第4页 
Ordering number:ENN6336  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA2023/2SC5611  
60V / 5A High-Speed Switching Applications  
Applications  
Package Dimensions  
unit:mm  
· Various inductance lamp drivers for electrical  
equipment.  
2165  
· Inverters, converters (strobes, flash, fluorescent lamp  
lighting circuit).  
· Power amplifier (high-power car stereo, motor  
control).  
[2SA2023/2SC5611]  
8.0  
4.0  
3.3  
1.0  
1.0  
· High-speed switching (switching regulater, driver  
3.0  
circuit).  
1.6  
0.8  
Features  
0.8  
· Low collector-to-emitter saturation voltage.  
0.7  
0.75  
· Excellent dependence of h on current.  
FE  
1 : Base  
· High-speed switching.  
· Micaless package facilitating mounting.  
1
2
3
2 : Collector  
3 : Emitter  
2.4  
4.8  
SANYO : TO126ML  
Specifications  
Note * ( ) : 2SA2023  
Note : The emitter and base are reversely assigned to those  
of our standard products encapsulated in the TO-  
126ML package.  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
(–)80  
(–)60  
(–)5  
(–)5  
(–)7  
1.3  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
˚C  
˚C  
Collector Dissipation  
P
C
10  
Tc=25˚C  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
I
=(–)40V, I =0  
(–)0.1  
(–)0.1  
200  
mA  
mA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
I
=(–)4V, I =0  
C
=(–)2V, I =(–)1A  
C
=(–)5V, I =(–)1A  
C
EBO  
DC Current Gain  
h
110  
FE  
Gain-Bandwidth Product  
Collector-to-Emitter Saturation Voltage  
f
100  
MHz  
V
T
V
(sat)  
=(–)2.5A, I =(–)0.125A  
(–)0.4  
CE  
C
B
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
13100TS (KOTO) TA-2336 No.6336–1/4  
1234

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