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2SA2018_1 PDF预览

2SA2018_1

更新时间: 2024-11-09 06:18:59
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 141K
描述
Low frequency transistor

2SA2018_1 数据手册

 浏览型号2SA2018_1的Datasheet PDF文件第2页浏览型号2SA2018_1的Datasheet PDF文件第3页 
2SA2018 / 2SA2030 / 2SA2119K  
Transistors  
Low frequency transistor  
2SA2018 / 2SA2030 / 2SA2119K  
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.  
zDimensions (Unit : mm)  
zApplications  
For switching, for muting.  
2SA2018  
zFeatures  
1) A collector current is large.  
2) Collector saturation voltage is low.  
VCE (sat) 250mA  
Each lead has same dimensions  
Abbreviated symbol : BW  
(1) Emitter  
(2) Base  
ROHM : EMT3  
EIAJ : SC-75A  
JEDEC : SOT-416  
At IC = 200mA / IB = 10mA  
(3) Collector  
2SA2030  
Each lead has same dimensions  
Abbreviated symbol : BW  
(1) Base  
(2) Emitter  
(3) Collector  
ROHM : VMT3  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Limits  
15  
12  
6  
500  
1  
Unit  
V
2.9  
1.1  
0.8  
2SA2119K  
0.4  
V
V
(
)
3
mA  
A
Collector current  
ICP  
(
)
2
( )  
1
VMT3  
150  
0.95 0.95  
1.9  
0.15  
Each lead has same dimensions  
Collector power dissipation  
Junction temperature  
PC  
EMT3  
SMT3  
mW  
200  
150  
Tj  
Tstg  
°C  
°C  
Abbreviated symbol : BW  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
JEDEC : SOT-346  
Storage temperature  
55 to +150  
Single pulse, Pw=1ms  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO 15  
V
V
V
IC= −10µA  
IC= −1mA  
IE= −10µA  
Collector-emitter breakdown voltage BVCEO 12  
Emitter-base breakdown voltage  
BVEBO  
ICBO  
IEBO  
6  
Collector cutoff current  
100 nA VCB= −15V  
100 nA VEB= −6V  
680  
Emitter cutoff current  
DC current transfer ratio  
hFE  
270  
VCE= −2V / IC= −10mA  
Collector-emitter saturation voltage VCE (sat)  
100 250 mV IC= −200mA / IB= −10mA  
Transition frequency  
Output capacitance  
fT  
260  
MHz VCE= −2V, IE=10mA, fT=100MHz  
pF VCB= −10V, IE=0A, f=1MHz  
Cob  
6.5  
Rev.C 1/2  

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