Datasheet > 2SA2029

2SA2029

更新时间： 2024-11-26 14:55:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	581K
描述
SOT-723

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中文翻译

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数据手册

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2SA2029 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-723 Plastic-Encapsulate Transistors

2SA2029 General Purpose Transistors (PNP)

SOT-723

FEATURES

Excellent h_FElinearity

Complements the 2SC5658

1. BASE

2. EMITTER

3. COLLECTOR

Marking: FQ,FR,FS

Absolute maximum ratings (T_a=25℃)

Symbol

Parameter

Limit

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

-60

-50

Collector-Emitter Voltage

Emitter-Base Voltage

-6

Collector Current -Continuous

Collector Dissipation

-150

150

℃

P_C

T_J,T_stg

-55~+150

Operation Junction and Storage Temperature Range

Electrical characteristics (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-50μA,I_E=0

I_C=-1mA,I_B=0

I_E=-50μA,I_C=0

V_CB=-60V,I_E=0

V_EB=-6V,I_C=0

-60

-50

-6

-0.1

560

-0.5

μA

Emitter cut-off current

I_EBO

DC current transfer ratio

h_FE

V_CE=-6V,I_C=-1mA

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-50mA,I_B=-5mA

V_CE=-12V,I_C=2mA, f=30MHz

V_CB=-12V,I_E=0, f=1MHz

140

MHz

Output capacitance

C_ob

Classification of h_FE

Rank

120~270

180~390

270~560

Range

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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