Datasheet > 2SA2029-R

2SA2029-R

更新时间： 2022-02-26 12:19:26

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
3页	706K
描述
PNP Bipolar Transistor

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2SA2029-R 数据手册

2SA2029-Q/R/S

Taiwan Semiconductor

Small Signal Product

PNP Bipolar Transistor

FEATURES

- Epitaxial planar die construction

- Surface Mount Device Type

- Moisture sensitivity level 1

- For high voltage switcing and amplifier application

- Pb free and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

- Excellent h_FElinearity

SOT-723

- Complements the 2SC5658

MECHANICAL DATA

1. BASE

- Case: SOT-723 small outline plastic package

- Terminal: Matte tin plated, lead free, solderable

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 1.27mg +/- 20%

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-60

-50

-6

Collector Current-Continuous

Collector Dissipation

-150

°C

P_C

150

Junction Temperature

Storage Temperature

T_j

150

T_stg

-55 to + 150

PARAMETER

TEST CONDITION

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

MIN

-60

-50

-6

TYP MAX

UNIT

I_C=-50μA , I_E=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Currect

I_C=-1mA , I_B=0

I_E=-50μA , I_C=0

V_CB=-60V , I_E=0

-0.1

μA

V_EB=-6V , I_C=0

Emitter Cut-Off Currect

I_EBO

-0.1

V_CB=-6V , I_C=1mA

I_C=-50mA , I_B=-5mA

V_CE=-12V , I_C=2mA , f=30MHz

V_CB=-12V , I_E=0 , f=1MHz

DC Current Transfer Ration

Collector-Emitter Saturation Voltage

Transition Frequency

h_FE

120

560

V_CE(sat)

f_T

-0.5

140

MHz

Output Capacitance

C_ob

Remark:

Classifiaction of h_FE

Rank

180~390

270~560

Range

120~270

Version: A14

Document Number: DS_S1402005

12 3

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