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2SA2018HT2L PDF预览

2SA2018HT2L

更新时间: 2024-11-25 20:09:31
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
3页 72K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN

2SA2018HT2L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-89
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.75
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-F3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):260 MHzBase Number Matches:1

2SA2018HT2L 数据手册

 浏览型号2SA2018HT2L的Datasheet PDF文件第2页浏览型号2SA2018HT2L的Datasheet PDF文件第3页 
2SA2018H  
Transistors  
Low-frequency Transistor  
2SA2018H  
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes.  
!External dimensions (Units : mm)  
!Applications  
For switching, for muting.  
1.6  
0.85  
(
)
2
!Features  
(
)
1
(
)
3
1) A collector current is large.  
2) Collector saturation voltage is low.  
VCE(sat) 250mV  
At IC = 200mA / IB = 10mA  
3) Flat lead  
(1) Base  
(2) Emitter  
(3) Collector  
ROHM : EMT3 Flat lead  
EIAJ : SC-89  
Abbreviated symbol : BW  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Symbol  
Limits  
15  
12  
Unit  
V
VCBO  
V
CEO  
V
I
C
500  
mA  
A
Collector current  
I
CP  
1
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
150  
mW  
°C  
°C  
Tj  
Tstg  
150  
55~+150  
Single pulse, PW=1ms  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
15  
12  
6
100  
260  
6.5  
100  
680  
250  
V
V
I
I
C
=10µA  
C=1mA  
BVEBO  
V
I
E
=10µA  
I
CBO  
FE  
CE(sat)  
270  
nA  
mV  
MHz  
pF  
V
CB=15V  
DC current transfer ratio  
h
V
CE=2V / I  
C
=10mA  
=10mA  
=10mA , f  
CB=10V , I =0A , f=1MHz  
Collector-emitter saturation voltage  
Transition frequency  
V
I
C=200mA / I  
B
f
T
V
V
CE=2V , I  
E
T=100MHz  
Output capacitance  
Cob  
E
!Packaging specifications and hFE  
Package name  
Code  
Taping  
T2L  
Type  
hFE Basic ordering unit  
(pieces)  
8000  
2SA2018H  

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