2SA2029-Q/R/S
Taiwan Semiconductor
Small Signal Product
PNP Bipolar Transistor
FEATURES
- Epitaxial planar die construction
- Surface Mount Device Type
- Moisture sensitivity level 1
- For high voltage switcing and amplifier application
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Excellent hFE linearity
SOT-723
- Complements the 2SC5658
MECHANICAL DATA
1. BASE
- Case: SOT-723 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 1.27mg +/- 20%
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
-60
-50
V
V
-6
V
Collector Current-Continuous
Collector Dissipation
-150
mA
mW
°C
°C
PC
150
Junction Temperature
Storage Temperature
Tj
150
Tstg
-55 to + 150
PARAMETER
TEST CONDITION
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
MIN
-60
-50
-6
TYP MAX
UNIT
V
IC=-50μA , IE=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Currect
IC=-1mA , IB=0
V
IE=-50μA , IC=0
V
VCB=-60V , IE=0
-0.1
μA
μA
VEB=-6V , IC=0
Emitter Cut-Off Currect
IEBO
-0.1
VCB=-6V , IC=1mA
IC=-50mA , IB=-5mA
VCE=-12V , IC=2mA , f=30MHz
VCB=-12V , IE=0 , f=1MHz
DC Current Transfer Ration
Collector-Emitter Saturation Voltage
Transition Frequency
hFE
120
560
VCE(sat)
fT
-0.5
V
140
MHz
pF
Output Capacitance
Cob
5
Remark:
Classifiaction of hFE
R
S
Rank
Q
180~390
270~560
Range
120~270
Version: A14
Document Number: DS_S1402005