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2SA2034 PDF预览

2SA2034

更新时间: 2024-11-25 07:29:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管高压
页数 文件大小 规格书
5页 185K
描述
High-Voltage Switching Applications

2SA2034 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:SC-64包装说明:SMALL OUTLINE, R-PSSO-G3
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.52
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):80
JESD-30 代码:R-PSSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):2800 nsBase Number Matches:1

2SA2034 数据手册

 浏览型号2SA2034的Datasheet PDF文件第2页浏览型号2SA2034的Datasheet PDF文件第3页浏览型号2SA2034的Datasheet PDF文件第4页浏览型号2SA2034的Datasheet PDF文件第5页 
2SA2034  
TOSHIBA Transistor Silicon PNP Triple Diffused Type  
2SA2034  
High-Voltage Switching Applications  
Unit: mm  
z High voltage  
z High speed  
: V  
= 400 V  
CBO  
: t = 0.3 μs (max) (I = 1.0 A)  
f
C
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collectorbase voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
400  
400  
7  
V
V
V
Collectoremitter voltage  
Emitterbase voltage  
DC  
I
2  
C
Collector current  
A
A
Pulse  
I
4  
CP  
JEDEC  
JEITA  
Base current  
I
1  
B
Ta = 25°C  
Tc = 25°C  
1
Collector power dissipation  
P
W
C
TOSHIBA  
2-7J1A  
15  
Junction temperature  
T
150  
55~150  
°C  
°C  
j
Weight: 0.36 g (typ.)  
Storage temperature range  
T
stg  
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2009-12-21  

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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-251VAR