Datasheet > 2SA2030T2L

2SA2030T2L

更新时间： 2024-11-24 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	66K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 500MA I(C) \| SOT-416VAR

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2SA2030T2L 数据手册

2SA2018 / 2SA2030

Transistors

Low frequency transistor

2SA2018 / 2SA2030

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

!External dimensions (Units : mm)

!Applications

For switching, for muting.

2SA2018

( )

!Features

0.8

1.6

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ 250mV

0.1Min.

At I^C= 200mA / I^B= 10mA

ROHM : EMT3

EIAJ : SC-75A

(1) Emitter

(2) Base

JEDEC : SOT-416

(3) Collector

2SA2030

1.2

0.2 0.8 0.2

!Absolute maximum ratings (Ta=25°C)

( )

(3)

Parameter

Collector-base voltage

Collector-emitter voltage

Symbol

Limits

Unit

( )

CBO

CEO

0.15Max.

500

Collector current

150

∗

˚C

Collector power dissipation

Junction temperature

Storage temperature

Tstg

150

-55~+150

ROHM : VMT3

(1) Base

(2) Emitter

∗Single pulse, PW=1ms

(3) Collector

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

BV^CBO

BVCEO

BVEBO

=10µA

=1mA

=10µA

Collector cutoff current

CBO

100

680

250

CB=15V

270

CE=2V / I

=10mA

=10mA , f

CB=10V , IE=0A , f=1MHz

DC current transfer ratio

Collector-emitter saturation voltage

hFE

VCE(sat)

100

260

6.5

MHz

=200mA / I

Transition frequency

Output capacitance

VCE=2V , I

=100MHz

Cob

!Packaging specifications and h^FE

Package name

Code

Taping

T2L

h_FEBasic ordering unit

(pieces)

Type

3000

8000

2SA2018

2SA2030

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