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2SA2017

更新时间: 2024-11-20 23:20:03
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描述

2SA2017 数据手册

  
2SA2017  
Transistors  
Power Transistor (80V, 4A)  
2SA2017  
!Features  
CE(sat)  
C B  
1) Low V  
. (Typ. –0.3V at I /I = 2 / 0.2A)  
2) Excellent DC current gain characteristics.  
3) Pc = 30W (Tc = 25°C)  
4) Wide SOA (safe operating area).  
5) Complements the 2SC5574.  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
-80  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
V
-80  
V
-5  
V
-4  
A
A(Pulse)  
W(Tc = 25°C)  
°C  
I
C
Collector current  
-6  
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
30  
Tj  
150  
-55~+150  
Tstg  
°C  
!Packaging specifications and hFE  
Type  
2SA2017  
Package  
TO-220FN  
h
FE  
E
-
Code  
Basic ordering unit (pieces)  
500  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
I
C
= 1mA  
= 50µA  
= 50µA  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
80  
80  
5  
-
-
-
-
-
V
V
BVCEO  
BVCBO  
IC  
BVEBO  
-
-
V
I
E
I
CBO  
-
10  
10  
1.5  
1.5  
200  
-
µA  
µA  
V
V
CB = 80V  
EB = 4V  
/I  
/I  
Emitter cutoff current  
I
EBO  
-
-
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
DC current transfer ratio  
V
V
CE(sat)  
CE(sat)  
-
-
I
I
C
B
= 2A/0.2A  
= 2A/0.2A  
= 4V/1A  
-
-
V
C
B
hFE  
100  
-
-
V
V
V
CE/I  
C
Transition frequency  
f
T
-
-
12  
80  
MHz  
pF  
CE = 12V , I  
CB = 10V , I  
E
= 0.5A  
= 0A , f = 1MHz  
Output capacitance  
Cob  
-
E

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